Behaviour of Schottky layer quantum well under transversal electric field

Abstract We have performed a modeling of the electrophysical parameters for a three-layered semiconductor structure which comprises an asymmetric rectangular quantum well (QW) in the Schottky layer, under various transversal electric fields. The QW width, L , being less than 100 A, the solution of the Schrodinger equation by the variational method is analyzed for a model potential of the QW's bottom “deformed” by the electric field. The C-V characteristics of the QW structure are analyzed based on the field and potential distributions obtained.