Temperature scaling of reverse current generated in proton irradiated silicon bulk

The value of the scaling parameter Eeff of the temperature dependence for current generated in silicon bulk is investigated for highly irradiated devices. Measurements of devices irradiated to fluences above 1 × 1015 neqcm-2 have shown a different temperature scaling behaviour than devices irradiated to lower fluences. This paper presents the determination of the parameter Eeff for diodes irradiated with protons up to fluences of 3 × 1015 neqcm-2 in the bias range from 0 V to 1000 V at temperatures from −36° to 0° at different stages of annealing. It is shown that Eeff for highly irradiated devices depends on the applied electric field: below depletion voltage, Eeff is observed to have a lower value than above depletion voltage.