Current-Controlled Negative Resistance in High-Voltage 4H-SiC p-i-n Rectifiers

This paper presents current-controlled negative resistance (CCNR) phenomena observed in ultrahigh voltage (BV $\geq $ 10 kV) 4H silicon carbide implanted anode p-i-n rectifiers. CCNR under forward bias is believed to be caused by the presence of a thin layer under the anode with a low carrier lifetime, preventing efficient hole injection and leading to poor conductivity modulation of the drift layer.