Hybrid mode analysis of RF characteristics in integrated optical modulations on III-V semiconductors

The method of lines was used to study the RF/microwave characteristics of III-V semiconductor traveling-wave electrooptic modulators. Double-rib, multilayer strip waveguides were investigated. It was found that Schottky barrier junction controlled structures support multinondispersive modes having phase velocities that closely match the optical carrier. These modes are potentially useful in ultrafast modulators operating into the millimeter-wave band. >