Thermal analysis of InGaAs/AlGaAs quantum well lasers diode by atomic force microscope (AFM)

In this paper, a 4 /spl mu/m ridge waveguide 980 nm InGaAs/AlGaAs quantum well laser diode is fabricated. It shows excellent optical and electrical characteristics. The output power is 68 mW with a threshold current of 35 mA. The far-field pattern shows fundamental transverse mode operation. Thermal properties of the diodes are presented by atomic force microscope (AFM) images. They clearly show the filling layer of SiO/sub 2/ near the ridge and that the active layer is the more thermal area in the cavity surface. The optical and electrical properties of 100 /spl mu/m wide stripe laser diodes are studied and thermal analysis is performed through the threshold current density at different operation temperatures.