Regular paperConfinement effects on Be acceptors in GaAsAlGaAs multi quantum well structures

Far infrared transmission has been used to study beryllium acceptors in AlGaAsGaAs quantum wells with widths between 200A and 100A. A bulk sample of GaAs was also studied and the binding energy was found to be 28.5meV. Our results clearly show the effects of confinement on the acceptor by an increase in binding energy in qualitative agreement with recent calculations.