Growth and characterization of InAs epitaxial layer on GaAs(111)B

The behavior of InAs deposition on $\mathrm{Ga}\mathrm{As}(111)B$ substrates and the corresponding routes toward strain relaxation have been investigated. InAs growth was for depositions ranging from 2 monolayers to 30 monolayers. Over this deposition range, different routes for strain relaxation caused by the lattice mismatch were observed. The strain relaxed through ragged step edge formation and Ga-In intermixing for low InAs deposition and through the formation of step bunching and dislocations for thicker depositions.