Application of fluoridized graphene in manufacture of photoelectric detection devices

The invention provides a novel application of fluoridized graphene, namely application in manufacture of photoelectric detection devices and flexible photoelectric detection devices by utilizing the fluoridized graphene as photoelectric sensitive materials. The devices can detect light with wavelength smaller than 415nm. In the application, the fluoridized graphene is firstly used as the photoelectric sensitive material for manufacturing the photoelectric detection devices, and the flexible photoelectric detection devices can be manufactured by the aid of flexible substrates and have the advantages of excellent high-frequency performance and low power consumption as compared with organic semiconductor flexible photoelectric detection devices. Further, resistance of the fluoridized graphene can reach 1T omega, and photoelectric detectors manufactured by the fluoridized graphene have ultralow dark-current noise. Large-area graphene film (the length of a diagonal line can reach 30 inches) can be manufactured by a chemical gas phase deposition method, while existing other inorganic broadband semiconductor film is failed in large-area manufacture, and thereby superlarge-scale photoelectric detection arrays based on the fluoridized graphene can be manufactured.