Study of boron depth profiles in IPI amorphous silicon films after thermal annealing using the (p, α) reaction

Abstract The measurements of boron profiles in the p -layer of a - Si : H / a - Si 1- x C x : H ( B )/ a - Si : H films after thermal annealing at temperatures T a = 100, 200, 260, 300° C and no annealing, were carried out by using 11 B (p, α) 8 Be resonance reaction at E p = 163 keV . The shapes and some of the characteristics of the boron concentration distribution in the p -layer of these films are presented.