Growth and Scintillation Properties of Pr Doped $({\hbox {Gd}},{\hbox {Y}})_{3}({\hbox {Ga}},{\hbox {Al}})_{5} {\hbox {O}}_{12}$ Single Crystals

Pr: (Gd,Y) 3 (Ga,Al) 5 O 12 single crystals were grown by the μ-PD method with RF heating system. Pr 3+ 5d-4f emission within 300-350 nm, Pr 3+ 4f-4f emission within 480-650 nm and Gd 3+ 4f-4f emission at 310 nm are observed in Pr: (Gd,Y) 3 (Ga,Al) 5 O 12 crystals. In order to determine light yield, the energy spectra were measured under 662 keV γ-ray excitation ( 137 Cs source), detected by a PMT H6521 (Hamamatsu). The light output of Pr1%:Gd 1 Y 2 Ga 3 Al 2 O 12 sample was of about one fifth of that of the Cz grown Pr:LuAG standard sample, i.e., around 4,000 photon/MeV. Two component scintillation decay shows the decay times (intensity) of 5.7 ns(5%), 38.7 ns (31%) and 187 ns (63%) using the PMT and digital oscilloscope TDS5032B detection.