100 kW DC biased, all semiconductor switch using Si P-I-N diodes and AlGaAs 2-D laser arrays

A two-dimensional laser array, delivering a peak power of 1 kW with an overall efficiency of 33%, was used to activate silicon p-i-n diodes. A single device, activated by a 1 kW laser, produced a holding voltage of 1000 V and conducted 56 A. When two similar p-i-n diodes were connected in parallel and activated by two 1 kW AlGaAs laser arrays, a holding voltage of 1000 V and conduction of 100 A were obtained. >