A quenched‐in defect in boron‐doped silicon

We observed a majority‐carrier trapping level at Ev+0.45 eV in boron‐doped silicon with a wide range of resistivities after being quenched from 900 to 1200 °C. The carrier capture cross section was measured to be 4×10−18 cm2. The activation energy for migration and defect formation energy were found to be 0.76±0.05 and 2.8±04 eV, respectively, consistent with that of the interstitial iron in silicon. However, we found a marked boron dependence, indicating that the nature of the defect processes may be complex.