Parameter extraction for relaxation-time based non-quasi-static MOSFET models

This paper presents a new extraction technique for non-quasi-static (NQS) delay time and gate resistance for relaxation-time-approximation based MOS transistor models. The technique is based on analysis of y dg in strong inversion, as a function of both V GS and frequency, for V DS = 0. An effective delay τ eff is computed from measured data, and a plot of τ eff versus the theoretical NQS-only delay allows the NQS relaxation time parameter and the gate resistance to be determined self-consistently.