2.5 µm semiconductor disk laser with 130 nm tuning range

The primary advantage of semiconductor disk lasers compared with in-plane diode lasers is an improved transverse mode control which enables high output power with diffraction-limited beam quality [1, 2]. They combine many advantages of solid-state lasers with the supplemental benefit of wavelength tailoring provided by the semiconductor gain material. The (AlGaIn)(AsSb) material system establishes a steady platform for optoelectronic devices operating in the mid-infrared spectral range [3]. In this study we report a GaSb-based optically-pumped semiconductor disk laser emitting the radiation tunable over 130 nm around 2.5 µm.