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Bi-assisted nucleation of GaAs grown on 5°off (001) silicon substrates by molecular beam epitaxy
Bi-assisted nucleation of GaAs grown on 5°off (001) silicon substrates by molecular beam epitaxy
2014
Poonyasiri Boonpeng
Alexandre Arnoult
Aurélien Kuck
Guy Lacoste
Chantal Fontaine
Keywords:
Molecular beam epitaxy
Nucleation
Optoelectronics
Silicon
Materials science
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