Local lifetime engineering in 600V pin diode using mix-mode simulation

This paper reports a detailed analysis of the effect of local lifetime killing (LLK) within the drift region on the reverse recovery (RR) characteristics and on-state performance of 600V Silicon PiN diodes. The paper also discusses the influence of the measurement circuit on the reverse recovery of the high voltage diodes and it proposes a simple and effective mix-mode simulation tool for an accurate assessment of the diode performance in reverse recovery mode.