DAMAGE INDUCED BY PIONS IN SILICON DETECTORS

High-resistivity, ion-implanted silicon detectors have been irradiated with positive and negative pions up to fluences of 10 14 cm −2 and 10 13 cm −2 , respectively. The energy dependence of the leakage-current damage constant around the Δ resonance is presented. Studies of the leakage-current damage constants (corrected for self-annealing and the long-term value) and the evolution of the depletion voltage with time show pions of momentum 350 MeV/c to be 20–25% more damaging than 1 MeV neutrons. Chargecollection measurements are also presented that show no more degradation in efficiency than previously measured for 1 MeV neutrons and 24 GeV/c protons.