Effects of spatial ordering of quantum dot arrays from small-angle X-ray diffraction data under variation of growth parameters

The small angle X-ray diffraction method is applied to the system of germanium quantum dots in the silicon matrix prepared by molecular-beam epitaxy in self-organization mode using the Stranski-Krastanov technique. Depending on the growth mode, the specific distances between Ge quantum dots and deviations from their correlated distribution are determined. The results are in agreement with the scanning tunneling microscopy data.