Radiation‐induced redistribution of gold in SiO2Si structures

Gold distribution in SiO2Si structures after diffusion and its redistribution under irradiation by high-energy electrons are studied by DLTS and SIMS methods. It is shown that the concentration of substitutional gold increases at radiation doses of 1013 to 1014 cm−2, which is due to the presence of a previously inactive interstitial component AuI and its dissolution in vacancies. A radiation dose increase results in radiation-induced gettering of gold by the SiO2Si interface with subsequent penetration of gold into SiO2. The state of the SiO2Si interface affects the behaviour of gold at irradiation. [Russian Text Ignore]