Minority Carrier Distribution in the Base Region of Alloy Junction Transistors

This paper presents an expression for the three dimensional distribution of minority carriers in the base region of alloy junction transistors for the case when the emitter is bigger than the collector. This expression has been successfully used for deriving a relation for the current amplification factor, αcb Such an expression is of basic importance when we want to calculate the ‘inverse alpha’ (value of αcb when the roles of collector and emitter are interchanged). The relation for αcb shows that as the ratio of collector to emitter radii is increased αcb will increase, which is in accordance with the experimental observations of Moore and Pankove.