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Defect Pair Formation by Implantation-Induced Stresses In High-Dose-Oxygen-Implanted-Silicon
Defect Pair Formation by Implantation-Induced Stresses In High-Dose-Oxygen-Implanted-Silicon
1994
J. H. Lee
J Park
D. Venables
Stephen Krause
Peter Roitman
Keywords:
Radiochemistry
Oxygen
Materials science
Silicon
induced stress
pair formation
Composite material
Correction
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