Full H-Band LNA in 35 nm mHEMT Technology with Constant Current Bias Control

In this paper, a compact low noise amplifier (LNA) circuit is presented, which was designed to be co-integrated in a multi-chip radar system covering the entire H-band (220–325 GHz). It consists of three cascode stages with a total gate width of 78 μm and is realized in a thin-film microstrip line environment on a 35 nm mHEMT process. The circuit demonstrates a flat gain of approximately 22 dB over the entire H-band and a noise figure of 6.2 dB. Not common for HEMT-based voltage controlled active devices is the capability of a constant current bias control with a single supply voltage of 3.3 V which leads to a homogeneous performance over the wafer compared to the common biasing method using only voltage sources.