Influence of surface recombination on stimulated emission threshold of semiconductor lasers

A theoretical study is made of the influence of diffusion and surface recombination on the spatial distribution of nonequilibrium carriers with depth and on the optical gain of an electron-beam-excited semiconductor laser. The dependences of the threshold current on the diffusion length, surface recombination velocity, and thickness of the dead layer are found for the longitudinal and transverse electron-beam pumping configurations.