A New Isolation Technique for Reverse Blocking IGBT with Ion Implantation and Laser Annealing to Tapered Chip Edge Sidewalls

This paper presents a new isolation technique for high breakdown voltage RB-IGBT, whose termination area is extremely small in comparison with conventional isolation technique with thermal diffusion. The p+ isolation layer for the reverse blocking capability was successively fabricated with negligible thermal budget by means of ion implantation and laser annealing to the chip edges. Sufficient blocking capability over 1200V was demonstrated with the new method.