Reliability assessment of GaAs and InP THz mixers and frequency multipliers fabricated on 3" wafers

We report on the developments in this two-yearEuropean Space Agency funded project that aims at performing a preliminary reliability study of 300 GHz InP heterostructure barrier varactor diode multipliers and 1.2 THz GaAs Schottky diode mixers. Fabrication of the monolithically integrated circuits will be done on 3” wafers usingestablished III-V processing. The reliability tests that will be performed include thermal and electrical step-stress studies, as well as shock, humidity and accelerated lifetime tests. We will present results and analysis of these experiments.