Silicon-Based Junctionless MOSFETs: Device Physics, Performance Boosters and Variations

In this chapter, we provide a review on the junctionless transistors which are promising nanoscale devices in terms of controlled doping fluctuations. We introduce a physics-based analytical model to describe the transistors’ characteristics in all the operation regions through which their device physics are clearly illustrated. Based on that, several performance boosters with geometry engineering are described to enhance the performance of junctionless transistors. Nonetheless, junctionless transistors are still subject to certain variations even with limited doping fluctuations. We discuss about the cross section and line edge roughness as two main variation sources and also explain one possible solution using the charge plasma concept to further suppress the variations.