Processing method of the semiconductor wafer

(57) Abstract: with the front surface and back surface of the wafer is rough grinding, comprising reducing the thickness of the wafer rapidly, the processing method of the semiconductor wafer. Then lapping the front surface and back surface lapping slurry, further reducing the thickness of the wafer, reducing the damage caused by rough grinding. Lapping time is reduced by the application of rough grinding step. The wafer is etched by chemical etching agents, further reduce the thickness of the wafer, the front surface of the wafer is polished by the polishing slurry, to reduce the thickness of the wafer to a predetermined final thickness of the wafer. In addition a fine grinding process, eliminating the wrapping, and / or the polishing time can be reduced.