Producing a defect-free fin-based device in a lateral Epitaxieüberwachsungsgebiet

The electronic device may fins (STI) regions is formed, are formed by epitaxially growing a first layer of material on a substrate surface at a bottom of a trench, the flat side walls between grave insulation. The height of the trench may be at least 1.5 times its width, and the first layer may be less than the height of fill grave. Then a second material layer on the first layer in the trench and over top surfaces of the STI regions may be allowed to grow epitaxially. The second layer may have a second width extending over the trench and over portions of the upper surfaces of the STI regions. The second layer may then be patterned and etched to form a pair of electronic apparatus fins over portions of the top surfaces of the STI regions in the vicinity of the trench. This process can prevent crystal defects in the Finn due to lattice mismatch in the layer interfaces.