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Energy-Efficient 4T-based SRAM Bitcell for Ultra-Low-Voltage Operations in 28nm 3D CoolCubeTM Technology
Energy-Efficient 4T-based SRAM Bitcell for Ultra-Low-Voltage Operations in 28nm 3D CoolCubeTM Technology
2018
Reda Boumchedda
Jean-Philippe Noel
Bastien Giraud
Adam Makosiej
Marco Antonio Ríos
Eduardo Esmanhotto
Emilien Bourde-Cicé
Mathis Bellet
David Turgis
Edith Beigne
Keywords:
Efficient energy use
Static random-access memory
Low voltage
Electronic engineering
Materials science
Electrical engineering
Computer science
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