Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr0.52Ti0.48)O3 thin films on all-oxide layers buffered silicon

Abstract Epitaxial ferroelectric Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO 3 (and PZT/LaNiO 3 ) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO 3 (and PZT/LaNiO 3 ) were fabricated with an extra CeO 2 buffer layer (CeO 2 /YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d 33 ,f coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d 31 ,f coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between grains) of the former films.