40nm & 22nm Embedded Charge Trap Flash for Automotive Applications

Key attributes of Embedded Charge Trap (eCTTM) Flash technology are presented. Automotive MCUs with 40nm eCT Flash are currently in volume production at UMC. The eCT technology features industry-leading cell size at the 40nm node, and scaling by more than 30% has been demonstrated at the 22nm node. eCT utilizes source-side injection (SSI) for programming and band-to-band (BTB) hot- hole injection for erasing to meet the high-speed requirements of automotive applications. Furthermore, random access time of 8 ns is achieved across the full range of operational temperature (-40 °C to 150 °C) and voltage (0.99 V to 1.21 V).