Interface roughness scattering in laterally coupled InGaAs quantum wires

Conductivity of In0.38Ga0.62As quantum wires grown on the (311)A plane of GaAs was studied using temperature dependent Hall effect. Detailed analysis of the scattering phenomena which control electron mobility along the wires indicates that the most significant scattering mechanism which limits electron mobility at low temperatures is scattering from interface roughness. This finding contributes to the general understanding of the potential to use self-assembled semiconductor quantum wires in the fabrication of thermoelectric devices where one-dimensionality and enhanced scattering at rough boundaries are important.