Non Planar Non Si CMOS - Challenges and Opportunities

High mobility materials such as SiGe, Ge and III-V are attractive replacements for the conventional Si channel material in future CMOS technology nodes (<11nm) to improve performance and reduce power [1]. To control short channel effects at these aggressively scaled device geometries, non-planar multi-gate devices are likely needed [2]. Although progress has been made in high mobility non-planar devices with SiGe, Ge and III-V channel materials [2-4], significant integration challenges remain.