Gate-Induced Superconductivity in Layered-Material-Based Electric Double Layer Transistors
2012
High carrier density part of many materials could be accessed by a variation of the field effect transistor technique: electric double layer transistor. Carrier density regime of n~1014 cm−2 can be easily accessed electrostatically realizing effective doping without chemical modification. In this study, we utilized micro-cleavage on a number of interesting layered materials. And realized high carrier density state and high performance transport on atomically flat surfaces.
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