Investigating the gate oxide in ultrathin, hybrid gate dielectrics for low-voltage organic thin-film transistors using atom probe tomography

Ultrathin, oxygen-plasma-grown aluminum oxide layers form high-quality gate oxides in hybrid gate dielectrics for low-voltage organic thin-film transistors. In this work, we have investigated the materials properties of the AlOx layer, such as the thickness and the composition, using the techniques of high-resolution transmission electron microscopy and atom probe tomography to get atomic scale resolution information. We correlate these materials properties with the superior dielectric properties of the plasma-grown AlOx layer and the performance of AlOx-based hybrid gate dielectrics for organic TFTs.