The Integrity of 28nm HK/MG nMOSFETs Probed with Drain Bias Stress

Adopting coupling drain bias stresses to probe the device integrity achieved the good consequences in the study of device leakage, interface state, and oxide trap causing some degradation effect in the tested devices and observed the GCIP effect at the higher drain stress conditions. Keywords-impact ionization; leakage; DIBL; MOSFET; drain; trap; GCIP effect; high-k