Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique

Abstract The distributions of Ti 3+ and Ti 4+ ions were evaluated by photoluminescence measurement in the wafers cut from different positions of the ingots grown by Czochralski and Verneuil techniques. Particular radial distributions of Ti 4+ as function of the position in the ingot were observed in the crystals grown by Verneuil technique different than the crystals grown by Czochralski method.