Temperature dependent electrophysical characteristics of GaAs-polymer composite varistors

Abstract A composition of GaAs-polymer tiny particles was pressed at a temperature of 130 °C and a pressure of 60 MPa and its current–voltage characteristic was studied. The result shows that the prepared disk has varistor behavior and can therefore be used to protect circuits from low overvoltage transients higher than 62 V. Temperature dependence of current-voltage characteristic and the electrical conductivity of the sample were investigated in the temperature range of 25–100 °C. It has been found that increase in temperature results in lower breakdown voltage and nonlinearity coefficient. At high temperatures, nonlinearity in the I – V characteristic of sample disappears and the conductivity becomes Ohmic in nature. The sample has hysteresis which decreases through increase in temperature. Annealing effect on leakage current and breakdown voltage was both investigated and analyzed using SEM micrographs. Finally, the electrical bandgap of the sample was measured.