Performance and Circuit Analysis of Independent Gate FinFET

In this article, we examine the influence of separate gate biasing on independent gate FinFET and related circuit through RF performance, gain and harmonic distortion analysis. Non-quasi static channel approach is considered in the small-signal modelling of 4 T-IG-FinFET. Intrinsic parameters such as Cgs, Cgd, Rgd, τm, ft, fmax are investigated over an wide range of frequency (10–100 GHz). The device is then employed to simulate a single stage cascode amplifier, which offers flexibility in controlling its noise margins, gain and HDs through the applied back gate bias.