Model-based scanner tuning for process optimization
2009
Given the continually decreasing k1 factor and process latitude in advanced technology nodes, it is important to fully
understand and control the variables that impact imaging behavior in the lithography process. In this joint work between
TSMC and ASML, we use model-based simulations to characterize and predict the imaging effects of these variables
and to fine-tune the scanner settings based on such information in order to achieve optimal printing results on a perreticle
basis. The scanner modeling makes use of detailed scanner characteristics as well as wafer CD measurements for
accurate model construction. Simulations based on the calibrated model are subsequently used to predict the wafer
impact of changes in tunable scanner parameters for all critical patterns in the product. The critical patterns can be
identified beforehand, either experimentally on wafer, mask or through model simulations. A set of optimized scanner
setting offsets, known as a "scanner tuning recipe" is generated to improve the imaging behavior for the critical patterns.
We have demonstrated the efficacy of this methodology for multiple-use cases with selected ASML scanners and TSMC
processes and will share the achieved improvements on defect reduction and yield improvements.
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