Interfacial Microstructure in W/2024Al Composite and Inhibition of W-Al Direct Reaction by CeO2 Doping: Formation and Crystallization of Al-Ce-Cu-W Amorphous Layers

In this work, interfacial microstructure in W/2024Al composite and inhibition of the W-Al direct reaction by CeO2 doping were investigated. The composites were prepared through powder sintering, and after preparation the composites were treated by annealing at 823 K. For the prepared W/2024Al composite, a multi-phase thin layer composed of WAl12 and WAl5 compounds were formed at the interface due to the W-Al direct reaction. While doping CeO2 in the composite, Al-Ce-Cu-W amorphous substituting of W-Al compounds were formed at the interfacial reaction layer. In an annealed state, the composite with CeO2 doping shows a significant inhibitory effect on W-Al compounds, which was attributed to the crystallized layer that evolved from Al-Ce-Cu-W amorphous as an interfacial obstacle. The crystallization product for Al-Ce-Cu-W amorphous layer was identified as bcc-structure Al-Ce-Cu-W phase without any binary/ternary Ce-containing phases. Therefore, by doping CeO2 in W/2024Al composite, W-Al direct reaction was markedly inhibited during both preparation and annealing.