Photoluminescence in Czochralski and hydrothermally grown bismuth silicon oxide

1994 
Abstract Excitation with band edge light at low temperatures produces an emission near 2.9 eV in both hydrothermally and Czochralski grown Bi 12 SiO 20 samples. The emission band is much stronger in the hydrothermal samples. It disappears when the samples are heated to 50 K. A weak 1.9 eV emission is also observed in the Czochralski samples. This emission grows when the 2.9 eV decays near 50 K and then goes out between 100 and 150 K.
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