Semiconductor laser with one side widened Ridge structure

The invention relates to a semiconductor laser having a base body and, arranged on the base body Ridge structure which is aligned along a longitudinal axis over an active region, said ridge structure having a first width, and wherein said ridge structure along the longitudinal axis having two opposite end surfaces, said ridge structure adjacent at least one end face has a relative arranged on one side to a center axis of the end portion Ridge structure, so that the ridge structure is widened on one side adjacent to the end face.