A multi-dimensional full automatic power semiconductor test bench for accurate semiconductor loss calculation

This paper presents a multi-dimensional full automatic semiconductor test bench for accurate semiconductor loss determination. The test bench is based on the double pulse test [1] and allows the measurement of conduction losses and switching energies for any current, voltage and temperature combination of the device under test. A conduction- and switching loss analysis is presented for silicon carbide (SiC)- and silicon (Si)-based semiconductor devices. Distinct differences of datasheet information and measurement results demonstrate the significant benefits of the designed test bench for an accurate semiconductor loss calculation. Afterwards the semiconductor loss calculation results based on the data sheet data and the measured losses are compared.