40 ns pulsed I/V set-up and measurement method applied to InP HBT characterization and electro-thermal modeling

This paper presents a novel pulsed I/V measurement methodology applied to HBTs characterization using very narrow 40 ns pulse widths. The measurement procedure consists in applying pulsed collector emitter voltages while driving the transistor base with constant DC currents. The proposed measurement technique is applied here to the characterization and electro-thermal modeling of InGaAs/InP DHBTs from Alcatel Thales III–V Lab. By monitoring pulse widths from 400 ns down to 40 ns, non isothermal, quasi isothermal and isothermal behaviors of transistors are observed respectively. Measurements and simulations are then done to study electro-thermal effects in bipolar current mirrors.