Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions

A new method based on solid-state substitution reactions is proposed for obtaining nanodimensional layers of GaAsP solid solutions on the surface of GaAs semiconductor crystals. The processed GaAs wafers exhibit a wide-bandgap optical window effect, whereby their room-temperature photoluminescence intensity increases by a factor of up to 25.