Surface Structure of Sc-O/W(100) System used as Schottky Emitter at High Temperature

The surface characterization of the Sc–O/W(100) system was performed by low-energy electron diffraction, Auger electron spectroscopy and work function measurement at 1500 K, the operating temperature of the Sc–O/W(100) emitter. For this, a sample holder with a heater was newly developed. In addition, the differential measurement method was applied to low-energy electron diffraction. The present results reveal that the p(1×1)-Sc–O/W(100) surface having a work function of 3.2 eV is formed by heating at 1700 K.