Selective Growth of GaAs and A1 x Ga 1−x as by Omvpe Using Tertiarybutylarsine

We have investigated the use of tertiarybutylarsine (TBAs) to selectively grow GaAs and Al x Ga 1−x As in trenches on partially-masked GaAs substrates. Both Si y N z and Si0 2 masks have been used, with geometries ranging from 4 - 160 μm. By varying temperature and pressure, we have optimized selectivity and minimized “ridge” growth near masked areas. The results show TBAs may be a suitable alternative to arsine for selective regrowth of these materials.