Plasma CVD apparatus and film forming method and process for producing a semiconductor device using the same

A plasma CVD device having an anode electrode and a cathode electrode, said device is for producing a thin film on a substrate by performing a plasma discharge between the anode electrode and the cathode electrode is provided with: - arranged between the anode electrode and the cathode electrode substrate holder and - at least one conductive element (11) which is disposed between the substrate holder and either the anode electrode or the cathode electrode; in which - the substrate holder holds the substrate; - the at least one conductive member so provided between the one electrode and the substrate holder that is covered substantially the entire space between the electrode and the substrate holder; and - the at least one conductive element is electrically connected to the one electrode and the substrate holder.