FET on hydrogenated diamond surface

Yu. V. Gulyaev,A. Yu. Mityagin,G. V. Chucheva,M. S. Afanas’ev,K. N. Zyablyuk,N. Kh. Talipov,P. G. Nedosekin,A. E. Nabiev

FET on hydrogenated diamond surface

2014

Yu. V. Gulyaev
A. Yu. Mityagin
G. V. Chucheva
M. S. Afanas’ev
K. N. Zyablyuk
N. Kh. Talipov
P. G. Nedosekin
A. E. Nabiev

It is demonstrated that a FET can be created on a hydrogenated diamond surface. A technology for production and properties of conducting hydrogenated diamond surface are considered. The technology is used to create a FET on the hydrogenated (110) surface of the 2A natural diamond.

Keywords:

Diamond
Nuclear magnetic resonance
Mathematics
Optics
Optoelectronics

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations